Methods of fabricating a semiconductor device using angled...

Details Methods of fabricating a semiconductor device using angled... Methods of fabricating a semiconductor device using angled...

2006-11-28

2008-10-28

Rose, Kiesha L (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C436S169000

Reexamination Certificate

active

07442608

ABSTRACT:
Methods of fabricating structures, such as memory cell structures by exposing at least one edge portion of an intermediate nitride layer arranged between a polysilicon layer and a tungsten layer and performing an angled implant at the at least one edge portion to form a doped region through the at least one edge portion of the intermediate nitride layer is provided. The intermediate nitride layer may be formed by an anneal process, for example.

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patent: 2003/0003657 (2003-01-01), Kim et al.
patent: 2003/0062566 (2003-04-01), Schuegraf et al.
Byun, Jeong Soo, “Reduction of Dichlorosiliare-Based Tungsten Silicide Resistivity by Amorphization and Its Applicability as an Electrode,” Journal of the Electrochemical Society, 146 (6)2261-2269, 1999.

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