Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2008-11-13
2011-12-27
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
Reexamination Certificate
active
08084344
ABSTRACT:
A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized.
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Han Sang-Yeob
Hong Chang-Ki
Lee Jae-Dong
Lee Jong-Won
Yoon Bo-Un
Harness Dickey & Pierce
Richards N Drew
Samsung Electronics Co,. Ltd.
Withers Grant
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