Methods of fabricating a selectively deposited tungsten nitride

Details Methods of fabricating a selectively deposited tungsten nitride Methods of fabricating a selectively deposited tungsten nitride

1996-11-15

2000-07-11

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438680, 438685, H01L 2144

Patent

active

060872578

ABSTRACT:
Methods for fabricating a tungsten nitride layer in a semiconductor substrate having an insulating layer formed thereon. The methods include forming a contact hole through the insulating layer. A tungsten nitride layer is then selectively deposited only in the contact hole by selectively reacting a nitrogen-containing gas with a tungsten source gas so as to prevent formation of tungsten nitride layer on the insulating layer outside the contact hole. Methods or fabricating metal wiring utilizing the methods of fabricating a tungsten nitride layer are also provided.

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