Methods of etching photoresist on substrates

Details Methods of etching photoresist on substrates Methods of etching photoresist on substrates

2006-08-01

2006-08-01

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

C430S313000, C430S315000, C430S317000, C216S062000, C216S067000, C438S725000

Reexamination Certificate

active

07083903

ABSTRACT:
Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y≧x and z≧0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.

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