Etching a substrate: processes – Nongaseous phase etching of substrate
Reexamination Certificate
2008-05-13
2008-05-13
Tran, Binh X. (Department: 1792)
Etching a substrate: processes
Nongaseous phase etching of substrate
C438S649000, C438S651000, C438S682000, C438S710000, C438S721000, C438S745000, C438S754000, C216S083000
Reexamination Certificate
active
11146648
ABSTRACT:
The invention includes methods of etching nickel silicide and cobalt silicide, and methods of forming conductive lines. In one implementation, a substrate comprising nickel silicide is exposed to a fluid comprising H3PO4and H2O at a temperature of at least 50° C. and at a pressure from 350 Torr to 1100 Torr effective to etch nickel silicide from the substrate. In one implementation, at least one of nickel silicide or cobalt silicide is exposed to a fluid comprising H2SO4, H2O2, H2O, and HF at a temperature of at least 50° C. and at a pressure from 350 Torr to 1100 Torr effective to etch the at least one of nickel silicide or cobalt silicide from the substrate.
REFERENCES:
patent: 5879974 (1999-03-01), Yamazaki
patent: 5933757 (1999-08-01), Yoshikawa et al.
patent: 6074960 (2000-06-01), Lee et al.
patent: 6362095 (2002-03-01), Woo et al.
patent: 6589884 (2003-07-01), Torek
patent: 7122410 (2006-10-01), Kammler et al.
patent: 2002/0164843 (2002-11-01), Yamazaki
patent: 0 219 827 (1986-10-01), None
patent: 0219827 (1987-04-01), None
patent: 0 750 338 (1996-06-01), None
patent: 0750338 (1996-12-01), None
patent: 11-54455 (1999-02-01), None
patent: 11054455 (1999-02-01), None
patent: 2006/019693 (2006-05-01), None
S.J. Pearton, Journal of Vacuum Science & Technology, vol. A 11(4), Jul./Aug. (1993), pp. 1772-1775.
S. Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattice Press (1986), pp. 516-517.
US06/196393 Jan. 18, 2007 PCT International Search Report.
US06/196393 Jan. 18, 2007 PCT Written Opinion.
US06/196393 Mar. 19, 2007 Response to Written Opinion.
Angadi Maki
Micro)n Technology, Inc.
Tran Binh X.
Wells St. John P.S.
LandOfFree
Methods of etching nickel silicide and cobalt silicide and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of etching nickel silicide and cobalt silicide and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of etching nickel silicide and cobalt silicide and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3955735