Methods of code programming a mask ROM device

Details Methods of code programming a mask ROM device Methods of code programming a mask ROM device

2006-11-07

2006-11-07

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S278000

Reexamination Certificate

active

07132334

ABSTRACT:
A method of code programming a mask read only memory (ROM) is disclosed. A method of the present invention includes forming a layer of developable anti-reflective coating over a plurality of code openings located on a substrate of a ROM device. The plurality of code openings are typically elements of a first code, or pre-code, pattern, and a portion of the developable anti-reflective coating layer is removed or processed to define a second code, or real-code, pattern of the device. The method may be practiced by applying and patterning a layer of photoresist material over the developable anti-reflective coating to form a second code pattern, and then removing portions of the developable anti-reflective coating that remain exposed beneath the patterned photoresist material.

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patent: 6420235 (2002-07-01), Wang
patent: 6436772 (2002-08-01), Otsuki
patent: 6689663 (2004-02-01), Chang et al.

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