Methods of code programming a mask ROM

Details Methods of code programming a mask ROM Methods of code programming a mask ROM

2005-04-05

2005-04-05

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S278000

Reexamination Certificate

active

06875659

ABSTRACT:
A method of code programming a mask read only memory (ROM) is disclosed. According to the method, a first photoresist layer is formed over word lines and a gate oxide layer of a substrate already having implanted bit lines. The first photoresist layer is patterned to develop pre-code openings over all of the memory cells, which correspond to intersecting word and bit lines. The first photoresist layer is then hardened using either a treatment implant or a treatment plasma. Subsequently, a second photoresist layer is formed over the first photoresist layer and patterned to develop real-code openings over memory cells which are actually to be coded with a logic “0” value. Each memory cell to be coded is then implanted with implants passing through the pre-code openings and the real code openings and into the memory cell.

REFERENCES:
patent: 5707765 (1998-01-01), Chen
patent: 6022644 (2000-02-01), Lin
patent: 6417548 (2002-07-01), Sheu et al.
patent: 6420235 (2002-07-01), Wang
patent: 6436772 (2002-08-01), Otsuki

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