Methods for transistor formation using selective gate...

Details Methods for transistor formation using selective gate... Methods for transistor formation using selective gate...

2006-08-04

2009-08-11

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S229000, C438S257000, C438S514000, C438S184000, C438S142000, C438S691000, C257SE21626, C257SE21640, C257SE21409

Reexamination Certificate

active

07572693

ABSTRACT:
Methods are disclosed for semiconductor device fabrication in which dopants are selectively implanted into transistor gate structures to counteract or compensate for dopant depletion during subsequent fabrication processing. A patterned implant mask is formed over a semiconductor device, which exposes at least a portion of the gate structure and covers the remaining upper surfaces of the device. Thereafter, dopants are selectively implanted in to the exposed gate structure.

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