Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2006-08-09
2010-06-29
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000, C257SE21568
Reexamination Certificate
active
07745309
ABSTRACT:
Methods for promoting interface bonding energy utilized in SOI technology are provided. In one embodiment, the method for promoting interface bonding energy includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein, performing a dry cleaning process on a surface of the silicon oxide layer and a surface of the second substrate, and bonding the cleaned silicon oxide surface of the first substrate to the cleaned surface of the second substrate.
REFERENCES:
patent: 6536449 (2003-03-01), Ranft et al.
patent: 2004/0166612 (2004-08-01), Maydan et al.
patent: 2005/0070073 (2005-03-01), Al-Bayatl et al.
patent: 2006/0081558 (2006-04-01), Collins et al.
International Search Report and Written Opinion of PCT/US07/75118, dated Jan. 17, 2008.
Lowenstein, et al., “Competitive adsorption of cations onto the silicon surface: The role of the Ammonium ion in Ammonia-peroxide solution”, J. Electrochemcial Soc., vol. 146, Issue 10, pp. 3886-3889, abstract, Oct. 1999.
H. Moriceau, et al. “The Bonding Energy Control: An Original Way to Debondable Substrates”.
Ghanayem Steve
Hansson Per-Ove
Moffatt Stephen
Thakur Randhir P S
Applied Materials Inc.
Ghyka Alexander G
Patterson & Sheridan
LandOfFree
Methods for surface activation by plasma immersion ion... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for surface activation by plasma immersion ion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for surface activation by plasma immersion ion... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4195640