Methods for selective deposition to improve selectivity

Details Methods for selective deposition to improve selectivity Methods for selective deposition to improve selectivity

2006-10-31

2006-10-31

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C438S586000, C438S589000

Reexamination Certificate

active

07129139

ABSTRACT:
Methods and associated apparatus of forming a microelectronic structure are described. Those methods comprise providing a substrate comprising a region of higher active area density comprising source and drain recesses and a region of lower active area density comprising source and drain recesses, wherein the region of lower active area density further comprises dummy recesses, and selectively depositing a silicon alloy layer in the source, drain and dummy recesses to enhance the selectivity and uniformity of the silicon alloy deposition.

REFERENCES:
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patent: 6403482 (2002-06-01), Rovedo et al.
patent: 6777759 (2004-08-01), Chau et al.
patent: 2002/0190284 (2002-12-01), Murthy et al.
patent: 2003/0098479 (2003-05-01), Murthy et al.
patent: 2005/0093021 (2005-05-01), Ouyang et al.

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