Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2007-11-06
2007-11-06
Norton, Nadine G. (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C156S345420, C134S001100, C134S001200, C134S001300, C216S079000
Reexamination Certificate
active
11019464
ABSTRACT:
Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.
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Hefty Robert
Kelly Michael
Lupan Michelle
Magni Enrico
Buchanan & Ingersoll & Rooney PC
Dahimene Mahmoud
Lam Research Corporation
Norton Nadine G.
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