Methods for removal of an anti-reflective coating following a re

Details Methods for removal of an anti-reflective coating following a re Methods for removal of an anti-reflective coating following a re

1997-12-18

2000-07-11

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438706, 438749, 438750, H01L 21283

Patent

active

060872713

ABSTRACT:
A method is provided for removing an bottom anti-reflective coating (BARC) from a transistor gate following at least one etch back process associated with a spacer formation and/or subsequent resistor protect etching process or processes. The method eliminates the need to use HF acid in the stripping process by substantially reducing the thickness of the BARC during each of the etching back processes, such that, only a thin layer of BARC material remains that can be easily removed with phosphoric acid.

REFERENCES:
patent: 4415383 (1983-11-01), Naem et al.
patent: 4876582 (1989-10-01), Janning
patent: 5034348 (1991-07-01), Hartswick et al.
patent: 5616401 (1997-04-01), Kobayashi et al.
patent: 5710067 (1998-01-01), Foote et al.
patent: 5911887 (1999-06-01), Smith et al.
S. Wolf, Silicon Processing for the VLSI Era, vol. 1, chapter 15: Wet Etching, Cleaning and Lift-off, pp. 516,518.

Affiliated with

Also associated with

Rating

Methods for removal of an anti-reflective coating following a re does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for removal of an anti-reflective coating following a re, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for removal of an anti-reflective coating following a re will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-542021