Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-07-19
2011-07-19
Dickey, Thomas L (Department: 2826)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE33001
Reexamination Certificate
active
07981767
ABSTRACT:
The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.
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Faure Bruce
Gardner Nathan F.
Guenard Pascal
Krames Michael R.
Letertre Fabrice
Dickey Thomas L
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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