4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state

Nathan F. Gardner

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A1InGaP LED having reduced temperature dependence

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate

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A1InGaP LED having reduced temperature dependence

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate

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AllnGaP LED having reduced temperature dependence

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor
Reexamination Certificate

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Halide dopant process for producing semi-insulating group III-V

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent

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Heterostructures for III-nitride light emitting devices

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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