Methods for reducing void formation in semiconductor devices

Details Methods for reducing void formation in semiconductor devices Methods for reducing void formation in semiconductor devices

2007-09-25

2007-09-25

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S594000, C438S596000, C257SE21624

Reexamination Certificate

active

11018778

ABSTRACT:
A method of forming a semiconductor device includes forming an insulating layer on a semiconductor substrate. The insulating layer has a trench therein with opposing sidewalls and a bottom surface. A first conductive layer is formed on the sidewalls and on the bottom surface of the trench to define a gap region. A portion of the first conductive layer is removed to thereby increase a width of the gap region. The first conductive layer may be removed from the sidewalls and the bottom surface of the trench such that an upper width of the gap region is greater than or equal to a lower width of the gap region. A second conductive layer is formed in the gap region after removing the portion of the first conductive layer to fill the gap region.

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