Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-13
2005-09-13
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S108000, C438S612000, C438S106000
Reexamination Certificate
active
06943103
ABSTRACT:
Novel methods for reducing shear stress applied to solder bumps on a flip chip. The methods are particularly applicable to reducing temperature-induced shear stress on solder bumps located adjacent to an empty space on a flip chip during high-temperature testing of the chip. According to a first embodiment, the method includes providing an anchoring solder bump in each empty space on the flip chip. The anchoring solder bumps impart additional structural integrity to the flip chip and prevent shear-induced detachment of solder bumps from the flip chip, particularly those solder bumps located adjacent to each anchoring solder bump. According to a second embodiment, the method includes providing an anchoring solder bump in the empty space and then connecting the anchoring solder bump to an adjacent solder bump on the chip using a solder bridge.
REFERENCES:
patent: 6214643 (2001-04-01), Chiu
patent: 6462425 (2002-10-01), Iwasaki et al.
patent: 6479900 (2002-11-01), Shinogi et al.
patent: 6686665 (2004-02-01), Gao et al.
Kuo Yia-Liang
Lin Yu-Chang
Lin Yu-Ting
Nhu David
Tawian Semiconductor Manufacturing Co., Ltd.
Tung & Associates
LandOfFree
Methods for reducing flip chip stress does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for reducing flip chip stress, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for reducing flip chip stress will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3414686