Methods for reducing damage to substrate layers in...

Details Methods for reducing damage to substrate layers in... Methods for reducing damage to substrate layers in...

2008-10-23

2010-10-05

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S644000, C438S653000, C438S680000, C438S687000, C257S751000, C257S753000, C257SE21169, C257SE21577, C257SE21585

Reexamination Certificate

active

07807568

ABSTRACT:
Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate to a process chamber comprising a dielectric layer having a feature formed therein. A barrier layer may be formed within the feature. A coating of a first conductive material may be formed atop the barrier layer. A seed layer of the first conductive material may be formed atop the coating. The feature may be filled with a second conductive material. In some embodiments, the seed layer may be formed while maintaining the substrate at a temperature of greater than about 40 degrees Celsius.

REFERENCES:
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patent: 6566259 (2003-05-01), Ding et al.
patent: 2004/0140196 (2004-07-01), Gopalraja et al.
patent: 2005/0023686 (2005-02-01), Lin
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patent: 2007/0095654 (2007-05-01), Gopalraja et al.
International Search Report and Written Opinion mailed May 28, 2010 for PCT Application No. PCT/US2009/061601.

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