Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-09
2005-08-09
Wilson, Christian (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S625000, C438S642000, C438S644000
Reexamination Certificate
active
06927159
ABSTRACT:
According to one embodiment of the invention, a method for providing improved layer adhesion in a semiconductor is provided. The method includes forming a dielectric layer. The method also includes forming a layer of metal in direct contact with the dielectric layer. The method also includes directly exposing the layer of metal, after forming the layer of metal, to plasma at a power level sufficient to penetrate through the layer of metal and reach the dielectric layer.
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Faust Richard Allen
Lu Jiong-Ping
Brady III W. James
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Wilson Christian
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