Methods for providing improved layer adhesion in a...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S625000, C438S642000, C438S644000

Reexamination Certificate

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06927159

ABSTRACT:
According to one embodiment of the invention, a method for providing improved layer adhesion in a semiconductor is provided. The method includes forming a dielectric layer. The method also includes forming a layer of metal in direct contact with the dielectric layer. The method also includes directly exposing the layer of metal, after forming the layer of metal, to plasma at a power level sufficient to penetrate through the layer of metal and reach the dielectric layer.

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