Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-26
2011-04-26
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S221000, C438S294000, C438S296000, C257SE21616, C257SE21628, C257SE21640, C257SE21642
Reexamination Certificate
active
07932143
ABSTRACT:
Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods are provided. Methods for fabricating a semiconductor device include providing a semiconductor substrate having an active region and a shallow trench isolation (STI) region. Epitaxial layer is formed on the active region to define a lateral overhang portion in a divot at the active region/STI region interface. A gate stack is formed having a first gate stack-forming layer overlying the semiconductor substrate. First gate stack-forming layer includes a non-conformal layer of metal gate-forming material which is directionally deposited to form a thinned break portion just below the lateral overhang portion. After the step of forming the gate stack, a first portion of the non-conformal layer is in the gate stack and a second portion is exposed. The thinned break portion at least partially isolates the first and second portions during subsequent etch chemistries.
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Hargrove Michael
Pal Rohit
Yang Frank Bin
Globalfoundries Inc.
Ingrassia Fisher & Lorenz P.C.
Lebentritt Michael S
Whalen Daniel
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