Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2011-08-30
2011-08-30
Arora, Ajay K (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S150000, C438S198000, C438S413000, C438S459000, C438S481000
Reexamination Certificate
active
08008205
ABSTRACT:
A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer.
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Fukushima Yasumori
Takafuji Yutaka
Takei Michiko
Tomiyasu Kazuhide
Arora Ajay K
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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