Methods for preparing semiconductor substrates and...

Details Methods for preparing semiconductor substrates and... Methods for preparing semiconductor substrates and...

2007-04-27

2010-12-14

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S689000

Reexamination Certificate

active

07851365

ABSTRACT:
The invention provides novel methods for preparing semiconductor substrates for the growth of an ultra-thin epitaxial interfacial phase thereon. The invention additionally provides the ultra-thin epitaxial interfacial phase formed on a semiconductor substrate prepared by the methods of the invention. Epitaxiality of the interfacial phase is ensured by maintaining the cleaned semiconductor substrate in a static and inert atmosphere prior to oxidation to form the interfacial phase. Such interfacial phase are useful as capping layers and dielectric layers for semiconductor devices.

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