Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2009-05-19
2011-12-20
Pizarro, Marcos D. (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S704000, C438S508000
Reexamination Certificate
active
08080482
ABSTRACT:
This invention generally relates to an epitaxial silicon semiconductor wafer with increased thermal conductivity to transfer heat away from a device layer, while also having resistance to common failure mechanisms, such as latch-up failures and radiation event failures. The semiconductor wafer comprises a lightly-doped device layer, a highly-doped protective layer, and a lightly-doped substrate. The invention is also directed to a process for forming such an epitaxial silicon wafer.
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Armstrong Teasdale LLP
MEMC Electronic Materials , Inc.
Montalvo Eva Yan
Pizarro Marcos D.
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