Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Patent
1997-01-16
1999-05-04
Breneman, R. Bruce
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
216 75, 438719, 438720, B44C 122
Patent
active
059001631
ABSTRACT:
A method for etching a layer of a microelectronic structure includes the steps of masking the layer to be etched so that predetermined portions of the layer are exposed, and providing an etching gas. An additional gas is also provided wherein the additional gas generates a compound having a carbene structure when exposed to a plasma discharge. A plasma of the etching gas and the additional gas is generated to thereby etch the exposed portions of the layer and to form the compound having a carbene structure. A polymer can thus be formed from the compound having the carbene structure on the sidewalls of the etched portions of the layer. Accordingly, the profile of the etched layer can be improved.
REFERENCES:
patent: 4490209 (1984-12-01), Hartman
patent: 4789426 (1988-12-01), Pipkin
patent: 5126008 (1992-06-01), Levy
patent: 5296095 (1994-03-01), Nabeshima et al.
patent: 5368684 (1994-11-01), Ishikawa et al.
patent: 5437765 (1995-08-01), Loewenstein
patent: 5591301 (1997-01-01), Grewal
patent: 5691246 (1997-11-01), Becker et al.
S.M. Sze, VLSI Technology, Second Edition, McGraw-Hill Press, 1988, pp. 200-204.
Kim Kyung-hoon
Kim Sung-kyeong
Kwag Gyu-hwan
Moon Dai-sik
Yi Whi-kun
Alejandro Luz
Breneman R. Bruce
Samsung Electronics Co,. Ltd.
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