Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-28
2010-06-15
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C977S887000, C977S888000, C257SE21561
Reexamination Certificate
active
07736954
ABSTRACT:
Methods for fabricating nanoscale features are disclosed. One technique involves depositing onto a substrate, where the first layer may be a silicon layer and may subsequently be etched. A second layer and third layer may be deposited on the etch first layer, followed by the deposition of a silicon cap. The second and third layer may be etched, exposing edges of the second and third layers. The cap and first layer may be removed and either the second or third layer may be etched, creating a nanoscale pattern.
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Gebara Gabriel
Hussain Muhammad Mustafa
Jammy Raj
Labelle Ed
Lanee Sidi
Booth Richard A.
Fulbright & Jaworski L.L.P.
Sematech Inc.
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