Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-09-30
2011-12-13
Dang, Trung Q (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S687000, C257SE21175, C257SE21479
Reexamination Certificate
active
08076241
ABSTRACT:
Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-ratio recessed features, such as trenches and vias, and enables formation of large Cu metal grains that include a continuous Cu metal layer plated onto the continuous Ru metal film. The large Cu grains lower the electrical resistivity of the Cu filled recessed features and increase the reliability of the integrated circuit.
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Cerio, Jr. Frank M.
Mizuno Shigeru
Ponnuswamy Thomas
Reid Jonathan
Dang Trung Q
Novellus Systems Inc.
Tokyo Electron Limited
Wood Herron & Evans LLP
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