Methods for minimizing mask undercuts and notches for plasma...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S694000, C438S712000

Reexamination Certificate

active

07351664

ABSTRACT:
A method for etching silicon layer of a substrate, which is deposited on a bottom electrode in a plasma processing chamber. The method includes performing a main etch step until at least 70 percent of silicon layer is etched. The method further includes an overetch step, which includes a first, second, and third process steps. The first process step employs a first process recipe, the second process step employs a second process recipe, and the third process step employs a third process recipe. The second process recipe employs a second bottom bias voltage level applied to the bottom electrode which is higher than the first bottom bias voltage level employs in the first process recipe and the third bottom bias voltage level employs in the third process recipe. The first, second, and third process steps are alternated a plurality of times until silicon layer is etched through.

REFERENCES:
patent: 5188704 (1993-02-01), Babie et al.
patent: 6187685 (2001-02-01), Hopkins et al.
patent: 6899817 (2005-05-01), Becker et al.
patent: 6905626 (2005-06-01), Westerman et al.
patent: 6905737 (2005-06-01), Verplancken et al.
patent: 6905969 (2005-06-01), DeOrnellas et al.
patent: 6926844 (2005-08-01), Laermer et al.
patent: 2003/0003748 (2003-01-01), Khan et al.
patent: 2005/0009358 (2005-01-01), Choi et al.
patent: 2005/0032386 (2005-02-01), Chang et al.
patent: 2007/0141847 (2007-06-01), Pandhumsoporn et al.

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