Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-30
2007-01-30
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S586000, C438S587000, C438S638000, C438S643000, C438S648000, C438S649000, C438S740000
Reexamination Certificate
active
10699256
ABSTRACT:
Methods for making a semiconductor structure are discussed. The methods include forming openings in a high-density area and a high-speed area, and forming a metallization layer simultaneously into the high-density area and the high-speed area. The metallization layer includes a combination of substances and compounds that reduce vertical resistance, reduce horizontal resistance, and inhibit cross-diffusion.
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Cho Chih-Chen
Wang Zhongze
Dorsey & Whitney LLP
Micron Technology, inc.
Thomas Toniae M.
Wilczewski M.
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