Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-01
2008-07-01
Nguyen, Cuong Q (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S393000, C257S532000, C257SE21008
Reexamination Certificate
active
07393740
ABSTRACT:
A fixed parallel plate micro-mechanical systems (MEMS) based sensor is fabricated to allow a dissolved dielectric to flow through a porous top plate, coming to rest on a bottom plate. A post-deposition bake ensures further purity and uniformity of the dielectric layer. In one embodiment the dielectric is a polymer. In one embodiment, a support layer is deposited onto the top plate for strengthening the sensor. In another embodiment, the bottom plate is dual-layered for a narrowed gap. Integrated circuit arrays of such sensors can be made, having multiple devices separated from each other by a physical barrier, such as a polycrystalline containment rim or trough, for preventing polymer material from one sensor from interfering with that of another.
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Baselt David R.
Fruhberger Bernd
Klaassen Erno
Mlsna Todd E.
Patel Sanjay V.
BioTechnology Law Group
Chambers Daniel M.
Nguyen Cuong Q
Xsilogy Inc.
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