Methods for inspection sample preparation

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

Reexamination Certificate

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Details

C216S060000, C216S062000, C216S072000, C438S712000

Reexamination Certificate

active

07112288

ABSTRACT:
Methods are provided for delineating different layers and interfaces for inspection of a semiconductor wafer, wherein a sectioned portion of a wafer is subjected to a reactive ion etch process before inspection using a scanning electron microscope.

REFERENCES:
patent: 5933704 (1999-08-01), Hwang et al.
patent: 5960306 (1999-09-01), Hall et al.
patent: 6162735 (2000-12-01), Zimmermann et al.
patent: 6284657 (2001-09-01), Chooi et al.
patent: 6548417 (2003-04-01), Dao et al.
patent: 6699795 (2004-03-01), Schwarz et al.

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