Methods for in-situ removal of an anti-reflective coating during

Details Methods for in-situ removal of an anti-reflective coating during Methods for in-situ removal of an anti-reflective coating during

1997-12-18

2000-02-22

Gulakowski, Randy

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

438184, 438230, 438723, 216 79, H01L 21335

Patent

active

060279591

ABSTRACT:
A method is provided for removing an bottom anti-reflective coating (BARC) from a transistor gate during an etch back process associated with a nitride resistor protect etch process. The method includes removing a silicon oxynitride BARC, in-situ, during an oxide resistor protect etching process using a plasma formed with CF.sub.4 gas, CHF.sub.3 gas, O.sub.2 gas, and Argon (Ar) gas.

REFERENCES:
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patent: 5674356 (1997-10-01), Nagayama
patent: 5698352 (1997-12-01), Ogawa et al.
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patent: 5733712 (1998-03-01), Tanaka et al.
patent: 5763954 (1998-06-01), Hyakutake
patent: 5773199 (1998-06-01), Linliu et al.
patent: 5856225 (1999-01-01), Lee et al.

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