Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-04
2005-01-04
Elms, Richard (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
06838381
ABSTRACT:
A method of manufacturing a semiconductor device is provided. A nickel silicide layer (e.g., NiSi) is formed on a substrate. Next, a hydrogen plasma treatment may be performed on the silicide layer, which may induce the formation of metal/silicon hydride bonds in the silicide layer. An etch stop layer is formed over the silicide layer. A dielectric layer is formed over the etch stop layer. An opening is formed in the dielectric layer. A portion of the etch stop layer is etched away at the opening to expose at least a portion of the silicide layer therebeneath. The etch chemistry mixture used during the etching step preferably includes hydrogen gas. The change in sheet resistance for the exposed silicide layer portion at the opening after the etching step, as compared to before the etching step, is preferably not greater than about 0.10 ohms/square.
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Chiu Yaun-Hung
Hsu Ju-Wang
Hsu Peng-Fu
Perng Baw-Ching
Tsai Ming-Huan
Owens Beth E.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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