Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-21
2005-06-21
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S211000, C438S257000, C438S530000, C438S542000, C438S514000, C438S532000, C257S314000, C257S315000
Reexamination Certificate
active
06908803
ABSTRACT:
The invention encompasses stacked semiconductor devices including gate stacks, wordlines, PROMs, conductive interconnecting lines, and methods for forming such structures. The invention also includes a method of forming a transistor gate comprising: a) forming gate dielectric layer; b) forming a polysilicon gate layer against the gate dielectric layer; and c) doping the polysilicon gate layer with a conductivity-enhancing dopant, the dopant being provided in a concentration gradient within the polysilicon layer, the concentration gradient increasing in a direction toward the gate dielectric layer. The invention also includes a wordline comprising: a) a polysilicon line; a substantially fluorine impervious barrier layer over the polysilicon line; and a b) layer of metal-silicide over the substantially fluorine impervious barrier layer.
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Powell Carl
Schuegraf Klaus Florian
Thakur Randhir P. S.
Jackson Jerome
Micro)n Technology, Inc.
Nguyen Joseph
Wells St. John P.S.
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