Methods for forming ultra thin structures on a substrate

Details Methods for forming ultra thin structures on a substrate Methods for forming ultra thin structures on a substrate

2011-07-19

2011-07-19

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S700000, C438S009000, C438S637000, C257SE21007, C257SE21058, C257SE21216, C257SE21231, C257SE21259, C257SE21264, C257SE21278, C257SE21293, C257SE21311, C257SE21486, C257SE21492

Reexamination Certificate

active

07981812

ABSTRACT:
Methods for forming an ultra thin structure using a method that includes multiple cycles of polymer deposition of photoresist (PDP) process and etching process. The embodiments described herein may be advantageously utilized to fabricate a submicron structure on a substrate having a critical dimension less than 55 nm and beyond. In one embodiment, a method of forming a submicron structure on a substrate may include providing a substrate having a patterned photoresist layer disposed on a film stack into an etch chamber, wherein the film stack includes at least a hardmask layer disposed on a dielectric layer, performing a polymer deposition process to deposit a polymer layer on the pattered photoresist layer, thus reducing a critical dimension of an opening in the patterned photoresist layer, and etching the underlying hardmask layer through the opening having the reduced dimension.

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