Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-12
2006-09-12
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07105413
ABSTRACT:
Methods for fabricating diffusion regions having steep concentration profiles within MOS devices while minimizing junction capacitance degradation are provided. In particular, methods are provided which include patterning a gate structure upon a semiconductor substrate and subsequently etching a recess in exposed portions of the substrate. In some cases, the method includes forming a first dopant region within the exposed portions prior to etching the recess. The method may additionally or alternatively include implanting a second set of dopants into portions of the semiconductor substrate bordering the recess. In either case, the method includes growing an epitaxial layer within the recess and implanting a third set of dopants into the semiconductor topography to form a second dopant region extending to a depth at least within the epitaxial layer. A resulting semiconductor topography includes a source/drain region comprising an upper portion consisting essentially of first dopants of a first conductivity type.
REFERENCES:
patent: 4963502 (1990-10-01), Teng et al.
patent: 5908313 (1999-06-01), Chau et al.
patent: 6121100 (2000-09-01), Andideh et al.
patent: 6372583 (2002-04-01), Tyagi
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6743684 (2004-06-01), Liu
patent: 6921948 (2005-07-01), Watt
patent: 6943085 (2005-09-01), Wang et al.
patent: 2003/0080361 (2003-05-01), Murthy et al.
patent: 2003/0197224 (2003-10-01), Song et al.
Patent Abstracts of Japan, JP 05-029617, Feb. 1993.
International Search Report, PCT/US2005/008177, mailed Jun. 17, 2005.
Nahm Jeong-Yeop
Pohland Oliver
Puchner Helmut
Xu Yangzhong
Cypress Semiconductor Corp.
Daffer Kevin L.
Daffer McDaniel LLP
Geyer Scott B.
Lettang Mollie E.
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