Methods for forming silicon nitride layers on silicon-comprising

Details Methods for forming silicon nitride layers on silicon-comprising Methods for forming silicon nitride layers on silicon-comprising

1997-11-10

2000-05-16

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438724, 438757, 438792, 438938, 427578, 427579, H01L 2131

Patent

active

060637137

ABSTRACT:
The invention encompasses methods of forming capacitors, methods of forming silicon nitride layers on silicon-comprising substrates, methods for densifying silicon nitride layers, methods for forming capacitors, and capacitors. In one aspect, the invention includes a method of densifying a silicon nitride layer comprising subjecting a silicon nitride layer to a nitrogen-comprising ambient atmosphere having at least about two atmospheres of pressure. In another aspect, the invention includes a method of forming a capacitor comprising: a) forming a first capacitor plate, the first capacitor plate comprising silicon and having a surface; b) forming a dielectric layer proximate the first capacitor plate, the dielectric layer comprising a silicon nitride layer and being formed by exposing the first capacitor plate surface to a nitrogen-comprising ambient atmosphere having at least about two atmospheres of pressure; and c) forming a second capacitor plate proximate the dielectric layer. In another aspect, the invention includes a capacitor comprising: a) a first conductive capacitor plate and a second conductive capacitor plate; and b) capacitor dielectric material intermediate the first and second capacitor plates, all of the dielectric material intermediate the first and second capacitor plates consisting essentially of a single oxide layer and a single nitride layer.

REFERENCES:
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5504029 (1996-04-01), Murata et al.
patent: 5508542 (1996-04-01), Geiss et al.
patent: 5523596 (1996-06-01), Ohi et al.

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