Methods for forming silicon comprising films using...

Details Methods for forming silicon comprising films using... Methods for forming silicon comprising films using...

2005-04-26

2005-04-26

Meeks, Timothy (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255370, C427S255393, C427S255395, C427S294000, C427S314000, C427S372200

Reexamination Certificate

active

06884464

ABSTRACT:
A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.

REFERENCES:
patent: 5766342 (1998-06-01), Shibuya et al.
patent: 6268299 (2001-07-01), Jammy et al.
patent: 6284583 (2001-09-01), Saida et al.
patent: 6333547 (2001-12-01), Tanaka et al.

Affiliated with

Also associated with

Rating

Methods for forming silicon comprising films using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for forming silicon comprising films using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming silicon comprising films using... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3416083