Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-09
2008-12-16
Richards, N. Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S202000, C438S207000, C438S257000, C438S286000, C438S300000, C257SE21412, C257SE21415
Reexamination Certificate
active
07465636
ABSTRACT:
Methods for forming a wire from silicon or other semiconductor material are disclosed. Also disclosed are various devices including such a semiconductor wire. According to one embodiment, a wire is spaced apart from an underlying substrate, and the wire extends between a first end and an opposing second end, each of the first and second ends being affixed to the substrate. Other embodiments are described and claimed.
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Intel Corporation
Lee Kyoung
Richards N. Drew
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