Methods for forming semiconductor structures with buried...

Details Methods for forming semiconductor structures with buried... Methods for forming semiconductor structures with buried...

2008-05-22

2010-10-12

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S391000, C438S409000, C438S423000, C438S526000, C257SE21396, C257SE21651, C257SE29346

Reexamination Certificate

active

07811881

ABSTRACT:
A semiconductor structure including a trench formed in a substrate and a buried isolation collar that extends about sidewalls of the trench. The buried isolation collar is constituted by an insulator formed from a buried porous region of substrate material. The porous region is formed from a buried doped region defined using masking and ion implantation or by masking the trench sidewalls and using dopant diffusion. Advantageously, the porous region is transformed to an oxide insulator by an oxidation process. The semiconductor structure may be a storage capacitor of a memory cell further having a buried plate about the trench and a capacitor node inside the trench that is separated from the buried plate by a node dielectric formed on the trench sidewalls.

REFERENCES:
patent: 4016017 (1977-04-01), Aboaf et al.
patent: 6008104 (1999-12-01), Schrems
patent: 6020250 (2000-02-01), Kenney
patent: 6599798 (2003-07-01), Tews et al.
patent: 6635915 (2003-10-01), Kokubun
patent: 2002/0072206 (2002-06-01), Chen et al.
patent: 2004/0219758 (2004-11-01), Birner et al.
patent: 2007/0122956 (2007-05-01), Chidambarrao et al.
patent: 2008/0217671 (2008-09-01), Cheng et al.

Affiliated with

Also associated with

Rating

Methods for forming semiconductor structures with buried... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for forming semiconductor structures with buried..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming semiconductor structures with buried... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4167611