Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Stark, Jarrett J (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27062, C257SE21249, C438S699000
Reexamination Certificate
active
07911001
ABSTRACT:
CMOS (complementary metal oxide semiconductor) fabrication techniques are provided to form DSL (dual stress liner) semiconductor devices having non-overlapping, self-aligned, dual stress liner structures.
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patent: 2007/0122982 (2007-05-01), Chan et al.
patent: 2008/0150033 (2008-06-01), Greene et al.
patent: 2008/0251851 (2008-10-01), Pan et al.
Choi Seung-Man
Dyer Thomas W.
Ku Ja Hum
Lee Kyoung Woo
Lee Tae-hoon
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Stark Jarrett J
Tynes, Jr. Lawrence
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