Methods for forming rhodium-based charge traps and apparatus...

Details Methods for forming rhodium-based charge traps and apparatus... Methods for forming rhodium-based charge traps and apparatus...

2011-08-02

2011-08-02

Such, Matthew W (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179, C257SE21422

Reexamination Certificate

active

07989290

ABSTRACT:
Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge traps in electronic structures for use in a wide range of electronic devices and systems. In an embodiment, conductive nanoparticles are deposited on a dielectric layer by a plasma-assisted deposition process such that each conductive nanoparticle is isolated from the other conductive nanoparticles to configure the conductive nanoparticles as charge traps.

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