Methods for forming metal interconnections for semiconductor...

Details Methods for forming metal interconnections for semiconductor... Methods for forming metal interconnections for semiconductor...

2005-11-15

2005-11-15

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S625000, C438S641000, C438S674000

Reexamination Certificate

active

06964922

ABSTRACT:
Methods of forming an integrated circuit device can include forming an interlevel dielectric film on an integrated circuit substrate including a conductive portion thereof. The interlevel dielectric film includes a contact hole therein exposing a portion of the conductive portion of the integrated circuit substrate, and the dielectric film includes a trench therein communicating with the contact hole wherein the trench is in a surface of the interlevel dielectric film opposite the integrated circuit substrate. A first metal layer is formed in the contact hole preferentially with respect to formation of the first metal layer on a surface of the interlevel dielectric film opposite the integrated circuit substrate. After preferentially forming the first metal layer in the contact hole, a second metal layer is formed on the surface of the interlevel dielectric film opposite the integrated circuit substrate.

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