Methods for forming integrated circuit isolation layers using ox

Details Methods for forming integrated circuit isolation layers using ox Methods for forming integrated circuit isolation layers using ox

1996-11-19

1998-09-29

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438439, 438297, 438786, H01L 2176

Patent

active

058145516

ABSTRACT:
A method for forming an integrated circuit isolation layer includes the steps of forming a patterned masking layer of a semiconductor substrate, forming an oxygen diffusing layer on the patterned masking layer and the exposed portion of the semiconductor substrate, and forming an isolation layer on the exposed portion of the substrate. In particular, the oxygen diffusing layer can be a layer of SiON, and the oxygen diffusing layer can have a thickness in the range of 30 .ANG. to 150 .ANG.. The oxygen diffusing layer and the mask layer can then be removed completing the isolation layer.

REFERENCES:
patent: 5318922 (1994-06-01), Lim et al.
patent: 5422300 (1995-06-01), Pfiester et al.
patent: 5612247 (1997-03-01), Itabashi

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