Methods for forming fine pattern of semiconductor device

Details Methods for forming fine pattern of semiconductor device Methods for forming fine pattern of semiconductor device

2007-02-06

2007-02-06

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S725000, C438S156000

Reexamination Certificate

active

10462448

ABSTRACT:
Provided is a method for forming a fine pattern of a semiconductor device by controlling the amount of flow of a resist pattern, including forming a resist pattern having a predetermined pattern distance on a material layer to be etched, forming a flow control barrier layer on the resist pattern to control the amount of flow during a subsequent resist flow process and to make the profile of the flowed pattern be vertical, optionally forming the flow control barrier layer by coating a material including a water-soluble high-molecular material and a crosslinking agent on the resist pattern, mixing and baking the coated material layer, and processing the resultant structure using deionized water, carrying out the flow resist process to form a hyperfine pattern and etching the lower material layer, and thereby forming fine patterns having the shape of contact holes or lines and spaces to have a critical dimension of about 100 nm or less, even with use of a KrF resist.

REFERENCES:
patent: 6348301 (2002-02-01), Lin
patent: 6486058 (2002-11-01), Chun
patent: 6489085 (2002-12-01), Huang et al.
patent: 6579657 (2003-06-01), Ishibashi et al.
patent: 6740473 (2004-05-01), Lin et al.
patent: 1998-0011726 (1998-04-01), None
patent: 1020010076552 (2001-08-01), None
Wolf et al., Silicon Processing for the VLSI Era, 1986, Lattice Press, vol. 1, pp. 453-454.

Affiliated with

Also associated with

Rating

Methods for forming fine pattern of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for forming fine pattern of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming fine pattern of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3864194