Methods for forming dual damascene wiring for semiconductor...

Details Methods for forming dual damascene wiring for semiconductor... Methods for forming dual damascene wiring for semiconductor...

2005-09-09

2009-06-02

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S629000, C438S637000, C438S672000, C257SE21641

Reexamination Certificate

active

07541276

ABSTRACT:
Exemplary embodiments of the invention generally include methods for forming multilayer metal interconnect structures using dual damascene methods that incorporate a via capping process to protect lower interconnection lines from etching damage or oxidation, for example, that may be caused by inadvertent exposure of lower interconnection lines to etching atmospheres.

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