Methods for forming contact holes having improved sidewall profi

Details Methods for forming contact holes having improved sidewall profi Methods for forming contact holes having improved sidewall profi

1996-12-24

1999-06-15

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438701, 438704, 438723, 438734, 438749, 438756, H01L 21302

Patent

active

059121858

ABSTRACT:
A method for forming a contact hole in a phosphosilicate glass layer includes the steps of forming a phosphosilicate glass layer, reflowing the phosphosilicate glass layer, removing a surface portion of the phosphosilicate glass layer, and forming the contact hole in the phosphosilicate glass layer. In particular, the surface portion of the phosphosilicate glass layer can be on the order of about 1000 .ANG. thick, and the step of removing the surface portion can include etching the surface portion. Furthermore, the step of forming the contact hole can include the step of selectively wet etching the phosphosilicate glass layer followed by the step of selectively dry etching the phosphosilicate glass layer.

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