Methods for forming cobalt layers including introducing...

Details Methods for forming cobalt layers including introducing... Methods for forming cobalt layers including introducing...

2007-02-06

2007-02-06

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S664000, C438S762000, C438S765000, C257SE21199, C257SE21622, C257SE21636

Reexamination Certificate

active

10924034

ABSTRACT:
The present invention provides methods for forming cobalt silicide layers, including introducing a vaporized cobalt precursor onto a silicon substrate to form a cobalt layer. The vaporized cobalt precursor has the formula Co2(CO)6(R1—C≡C—R2), wherein R1is H or CH3, and R2is H, t-butyl, methyl or ethyl. The silicon substrate is thermally treated so that silicon is reacted with cobalt to form a cobalt silicide layer. Methods for manufacturing semiconductor devices including the cobalt silicide layers described herein and such devices are also provided.

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patent: 6346477 (2002-02-01), Kaloyeros et al.
patent: 2002/0036353 (2002-03-01), Song et al.
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patent: 10-0349625 (2002-08-01), None
Notice to Submit Response, Korean App. 10-2003-0065572, May 25, 2005.

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