Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-29
2006-08-29
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S620000, C438S627000, C438S628000, C438S629000, C438S685000, C438S653000, C438S656000, C438S681000
Reexamination Certificate
active
07098131
ABSTRACT:
Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR1)(NR2R3)3, wherein R1, R2and R3are each independently H or a C1–C6alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.
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Choi Gil-Heyun
Choi Kyung-In
Kang Sang-Bom
Kim Byung-Hee
Lee You-Kyoung
Fourson George
Maldonado Julio J.
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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