Methods for forming a thin film on an integrated circuit...

Details Methods for forming a thin film on an integrated circuit... Methods for forming a thin film on an integrated circuit...

2006-02-28

2006-02-28

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S776000, C438S777000, C438S778000, C438S787000, C438S788000

Reexamination Certificate

active

07005389

ABSTRACT:
Methods for forming a thin film on an integrated circuit device including providing energy to reactants in a deposition chamber to activate the reactants. The activated reactants are then deposited on the substrate to form a thin film on the substrate. The reactants selected may be selectively activated so that different thin films are formed in a single chamber thereby reducing processing time.

REFERENCES:
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patent: 2002/0066411 (2002-06-01), Chiang et al.
patent: 1989700174 (1989-01-01), None
patent: 10-2002-0088597 (2002-11-01), None
patent: 10-2002-0091643 (2002-12-01), None
Korean Office Action corresponding to application No. 20030020786, dated Apr. 29, 2005.

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