Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-05-17
2011-05-17
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S788000, C438S789000, C438S790000, C257SE21277, C257SE21278
Reexamination Certificate
active
07943531
ABSTRACT:
A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH3plasma are reacted to form a silicon oxide layer. The first silicon-containing precursor includes at least one of Si—H bond and Si—Si bond. The second silicon-containing precursor includes at least one Si—N bond. The deposited silicon oxide layer is annealed.
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paten
Mallick Abhijit Basu
Nemani Srinivas D.
Yieh Ellie Y.
Applied Materials Inc.
Kilpatrick Townsend and Stockton
Lee Hsien-Ming
Parendo Kevin
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