Methods for forming a metal layer on a semiconductor

Details Methods for forming a metal layer on a semiconductor Methods for forming a metal layer on a semiconductor

2006-06-27

2006-06-27

Luu, Chuong A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S584000, C438S679000, C438S685000

Reexamination Certificate

active

07067420

ABSTRACT:
A metal layer is formed on an integrated circuit device including forming an insulating layer on an integrated circuit substrate. A contact hole is formed by selectively etching the insulating layer to thereby partially expose the substrate. A metal layer including tantalum nitride is formed on the insulating layer including the contact hole using a tantalum precursor including a tantalum element and at least one bonding element that is chemically bonded to the tantalum element. A part of the at least one bonding element include at least one ligand bonding element that is ligand-bonded to the tantalum element. Forming the metal layer may include removing at least some of the ligand bonded elements with a removing gas that is substantially free of hydrogen radicals. The metal layer may be formed using a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process. A copper or other metal layer may be deposited on the metal layer including tantalum nitride.

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Jin-Seong Park et al., “Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent”, Electrochemical and Solid State Letters, 4 (4) C17-C19 (2001).

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